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Lines a–f: Raman spectra of thick samples, irradiated at different laser fluences. Lines 1 and 2: Raman spectra of thick irradiated samples before and after thermal annealing, respectively.
Cross-sectional HRTEM micrograph of (a) thick sample, (b) thick sample, and (c) thick sample. It is noted that samples were capped with an layer in order to protect the formed Si nanodots during TEM sample preparation process.
Room-temperature PL spectra of samples, which were posttreated by laser irradiation and subsequent thermal annealing, with initial film thicknesses of 4, 15, and . The PL spectra intensities of 15 and thick samples are magnified by 12 and 55, respectively. The room-temperature PL spectra of as-deposited and posttreated only by laser irradiation samples are given.
PL peak position, mean profile size, and areal density of Si nanodots for samples with various initial film thicknesses.
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