Full text loading...
(Color online) AFM image of a single SWCNT device contacted by electrodes in its schematic three-terminal FET configuration. (b) Transfer characteristics in a typical -type s-SWCNT FET at , showing the hysteresis between forward and reverse sweeps of the gate voltage. Indicated are the positions of the threshold voltage for the forward and reverse sweeps and the hysteresis gap . (c) Variation of the hysteresis gap as a function of gate voltage sweep range for high and low temperatures. (d) Variation of the threshold for the forward sweep as a function of the hold time at the start of the sweep.
(Color online) Variation of , , and as a function of for a SWCNT FET. (b) Arrhenius plot of the on-state conductance as a function of . The inset shows the variation of the slope of the transconductance curve (which is a measure of carrier mobility) as a function of .
(Color online) Variation of the ration (엯) and (◇) with , plotted as an Arrhenius plot, for a SWCNT FET. The inset shows the ratio .
Article metrics loading...