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Improved memory window for Ge nanocrystals embedded in SiON layer
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10.1063/1.2362972
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    Affiliations:
    1 Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan, Republic of China
    2 Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China; Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China; and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China
    3 Department of Photonics, National Chiao Tung University, Hsin-Chu 300, Taiwan, Republic of China and Display Institute, National Chiao Tung University, Hsin-Chu 300, Taiwan, Republic of China
    4 Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan, Republic of China
    a) Electronic mail: tcchang@mail.phys.nsysu.edu.tw
    Appl. Phys. Lett. 89, 162105 (2006); http://dx.doi.org/10.1063/1.2362972
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/content/aip/journal/apl/89/16/10.1063/1.2362972
2006-10-18
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved memory window for Ge nanocrystals embedded in SiON layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2362972
10.1063/1.2362972
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