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Separate domain formation in mixed layer
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10.1063/1.2362981
/content/aip/journal/apl/89/16/10.1063/1.2362981
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2362981
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Plan-view bright field TEM images of pure layer as prepared (a) and annealed at (b) taken at in focus and mixed layer containing of as prepared (c) and annealed at (d) taken at underfocus. Insets show diffraction patterns of each microstructure.

Image of FIG. 2.
FIG. 2.

(Color online) Plan-view high resolution TEM (HR-TEM) image of mixed layer containing of annealed at for (a), and bright field images taken at the same position at (b) in focus, (c) overfocus, and (d) underfocus.

Image of FIG. 3.
FIG. 3.

Variations of the electrical sheet resistance as a function of temperature for pure layer and layers containing 5.3 and , which are indicated as GST, 5.3% , and 8.4% , respectively. All the samples were prepared on substrates and measured at a heating rate of (a). From those variations, activation energy of amorphous to fcc crystallization of each layer is obtained by Kissinger’s plots (b).

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/content/aip/journal/apl/89/16/10.1063/1.2362981
2006-10-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Separate domain formation in Ge2Sb2Te5–SiOx mixed layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2362981
10.1063/1.2362981
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