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AFM images of GaSb on GaAs after 3 ML deposition under (a) 1:10 III/V ratio resulting in IMF QDs and (b) 1:1 III/V ratio resulting in SK QDs.
RHEED images of the (a) SK and (b) IMF QDs. The SK QDs show “chevron” patterns while the IMF QDs show patterns corresponding to relaxed islands.
Cross sectional TEM image of (a) GaSb SK QD on GaAs and (b) IMF QD with strain relieving misfit dislocations that can be observed at the interface.
PL from the QD samples at . The SK QDs have a ground state at with excited states at 930 and showing intersubband energy spacings of 117.8 and . The IMF QDs have a ground state at with weak excited states observed at 1060 and .
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