1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling
Rent:
Rent this article for
USD
10.1063/1.2363139
/content/aip/journal/apl/89/16/10.1063/1.2363139
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2363139
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Gate leakage current density vs gate voltages for control and rapid thermal annealed HfSiON [: 65%] samples at different temperatures ranging from for in ambient.

Image of FIG. 2.
FIG. 2.

Variation of leakage with voltage for HfSiON samples for different annealing durations varying from in at .

Image of FIG. 3.
FIG. 3.

Current density at a fixed gate bias at as function of the equivalent oxide thickness (EOT) for . EOT can be scaled down to , showing improved scalability. Trend lines for [Gusev et al. (Ref. 10) and Ref. 13], previous HfSiON data [Sekine et al. (Ref. 9), Gusev et al. (Ref. 10), and Koike et al. (Ref. 8)], and treated by RTP [Chen et al. (Refs. 5 and 6)] are also shown.

Loading

Article metrics loading...

/content/aip/journal/apl/89/16/10.1063/1.2363139
2006-10-17
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2363139
10.1063/1.2363139
SEARCH_EXPAND_ITEM