1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling
Rent:
Rent this article for
USD
10.1063/1.2363139
/content/aip/journal/apl/89/16/10.1063/1.2363139
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2363139
/content/aip/journal/apl/89/16/10.1063/1.2363139
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/89/16/10.1063/1.2363139
2006-10-17
2014-09-03
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2363139
10.1063/1.2363139
SEARCH_EXPAND_ITEM