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Indium adsorption on GaN under metal-organic chemical vapor deposition conditions
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10.1063/1.2364060
/content/aip/journal/apl/89/16/10.1063/1.2364060
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2364060
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Real-time x-ray fluorescence measurements of indium surface density during TMI dosing on the GaN (0001) surface at . The curves are offset for clarity. The vertical lines indicate injection and vent of TMI. The indium condensation boundary is at a TMI pressure of at this temperature.

Image of FIG. 2.
FIG. 2.

Phase diagram for indium condensation as a function of TMI pressure and substrate temperature. The squares and circles show measurements of the indium condensation boundary in 0% and 8% ambients, respectively. The line denotes the vapor pressure of bulk indium (Ref. 14 ).

Image of FIG. 3.
FIG. 3.

(a) Equilibrium indium surface density in 0% vs TMI pressure below the condensation boundary, for five substrate temperatures, together with Langmuir theory fit. The estimated error in data is . (b) Data for 0% and 8% ambients at . Theory curves end at observed condensation boundaries.

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/content/aip/journal/apl/89/16/10.1063/1.2364060
2006-10-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indium adsorption on GaN under metal-organic chemical vapor deposition conditions
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2364060
10.1063/1.2364060
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