1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Bias dependent inversion of tunneling magnetoresistance in tunnel junctions
Rent:
Rent this article for
USD
10.1063/1.2364163
/content/aip/journal/apl/89/16/10.1063/1.2364163
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2364163
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Schematic cross section of a tunneling structure. (b) Top view of a device with four wires attached. (c) TEM micrograph showing the thin GaAs barrier (cleaned by ) before preparation of the second Fe contact. (d) High-resolution TEM micrographs, of an ideal interface and (e) of an interface after treatment.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Normalized TMR traces of a tunnel junction with thick barrier at and at room temperature. Bias voltage: . Both interfaces were cleaned with before deposition of iron. (b) dependence of the spin polarization derived from Jullière’s model for the interface combinations: hy-hy, ox-hy, and ox-ox. Bias voltage: .

Image of FIG. 3.
FIG. 3.

(Color) Bias dependence of the TMR for junctions with one “ideal” epitaxial interface. The other interface was either untreated (open squares) or cleaned by a plasma (triangles). is applied along the easy [100] direction. Two insets show examples for positive and negative TMR at and , respectively. The right inset displays the circuitry; the lower interface is the epitaxial one. Also shown is the calculated spin polarization for the Fe layer closest to the barrier. For energies above minority spins dominate the interfacial density of states.

Loading

Article metrics loading...

/content/aip/journal/apl/89/16/10.1063/1.2364163
2006-10-18
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias dependent inversion of tunneling magnetoresistance in Fe∕GaAs∕Fe tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2364163
10.1063/1.2364163
SEARCH_EXPAND_ITEM