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Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy
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10.1063/1.2364456
/content/aip/journal/apl/89/16/10.1063/1.2364456
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2364456

Figures

Image of FIG. 1.
FIG. 1.

(a) Bright field cross-section TEM image of InN on GaN. (b) High resolution TEM lattice image of InN.

Image of FIG. 2.
FIG. 2.

XRD (002) scan of InN grown on GaN/sapphire substrate. The insert shows the scan of (012) plane in InN.

Image of FIG. 3.
FIG. 3.

(Color online) Temperature-dependent Hall data of InN. (a) Mobility and integrated electron sheet density vs temperature for sample D. (b) Comparison of measured mobility with a theoretical transport model. Charged dislocation scattering is identified as the dominant mobility-limiting scattering mechanism. If dislocation densities and background ionized impurity densities could be reduced, RT mobilities as high as can be achieved.

Image of FIG. 4.
FIG. 4.

(Color online) Temperature dependent photoluminescence spectra of InN (sample C). Insert: photoluminescence peak positions at different temperatures.

Tables

Generic image for table
Table I.

Structural and electrical characterizations of samples A–D grown at different In fluxes: surface roughness (rms) measured by AFM, FWHM of (0002) peak in scan, room temperature and mobility , sheet carrier concentration , and effective carrier volume concentration . The effective carrier volume concentration is calculated considering a surface charge of near the InN surface (Ref. 12).

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/content/aip/journal/apl/89/16/10.1063/1.2364456
2006-10-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2364456
10.1063/1.2364456
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