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(a) Bright field cross-section TEM image of InN on GaN. (b) High resolution TEM lattice image of InN.
XRD (002) scan of InN grown on GaN/sapphire substrate. The insert shows the scan of (012) plane in InN.
(Color online) Temperature-dependent Hall data of InN. (a) Mobility and integrated electron sheet density vs temperature for sample D. (b) Comparison of measured mobility with a theoretical transport model. Charged dislocation scattering is identified as the dominant mobility-limiting scattering mechanism. If dislocation densities and background ionized impurity densities could be reduced, RT mobilities as high as can be achieved.
(Color online) Temperature dependent photoluminescence spectra of InN (sample C). Insert: photoluminescence peak positions at different temperatures.
Structural and electrical characterizations of samples A–D grown at different In fluxes: surface roughness (rms) measured by AFM, FWHM of (0002) peak in scan, room temperature and mobility , sheet carrier concentration , and effective carrier volume concentration . The effective carrier volume concentration is calculated considering a surface charge of near the InN surface (Ref. 12).
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