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Shift register based on field-induced repulsion. (a) Two conducting levers each in one of two stable positions, B and F. (b) A field brings charge to the ends. (c) Repulsion has flipped the levers. (d) A shift register. (e) After a pulse. (f) Two sequential forward lever positions. (g) Improperly advanced information. (h) An encoding scheme. (i) A laboratory-scale memory. (j) A memory formed from a conducting, swollen polymer. (k) Side view (before swelling) of (j), viewed from the right. (l) Optimized design.
Shift register using a two-lever cell. (a) Two insulating levers in zero field. (b) A positively charged lever is in the rightmost of two bistable positions, pulling the other lever slightly toward it. (c) Reversing the field, the positive lever has caused the negative lever to be pulled into its leftmost stable position. (d) Perspective view of shift register, with positive primary levers, negative secondary levers, and fixed negative posts. (e) Field for a shift cycle. (f)–(j) P at the times indicated in (e) drawn as plan views.
Integration of an array of shift registers. [(a)–(c)] Shift registers molded in a waveguide and operated between an array of crossed waveguides. (d) Connections required along only one edge. (e) Shingling the shift registers of F.
Manufacturing tolerance of elastomer memories. The table entries are the ± percent range of lever stiffness variation allowable for proper operation of the geometries of Figs. 1(k) and 1(l).
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