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Magnetic field sensing scheme using tunneling junction with superparamagnetic CoFeB layer
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10.1063/1.2370876
/content/aip/journal/apl/89/16/10.1063/1.2370876
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2370876
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TMR in terms of the applied magnetic field for tunneling junctions with thicknesses of the top free CoFeB layer of (a) , (b) , and (c) . Arrows indicate the schematic spin configuration of the top free CoFeB layer (upper) and the bottom pinned CoFeB layer (lower).

Image of FIG. 2.
FIG. 2.

Resistance of tunneling junctions in terms of the applied magnetic field at various angles to the bottom pinned CoFeB layer. The numbers in parentheses are the nominal thickness of each layer in angstrom.

Image of FIG. 3.
FIG. 3.

Magnetoresistance ratio, , in terms of the applied magnetic field or magnetic tunnel junctions with top free layer thicknesses of (a) and (b) .

Image of FIG. 4.
FIG. 4.

Isothermal magnetization of tunneling junctions at various temperatures. The numbers in parentheses are the nominal thickness of each layer in angstrom.

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/content/aip/journal/apl/89/16/10.1063/1.2370876
2006-10-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetic field sensing scheme using CoFeB∕MgO∕CoFeB tunneling junction with superparamagnetic CoFeB layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/16/10.1063/1.2370876
10.1063/1.2370876
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