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(Color online) Device fabrication, geometry, and operation. (a) For evaporation, a wire is placed on top of the shadow mask to produce a few micrometer gap between Cr/Au electrodes, which are in width. Nanotubes are placed on the electrodes from a suspension in dimethylformamide. (b) AFM image of completed device. A patch of a nanotube network bridges the electrodes. The conductance is measured through attached source and drain electrodes. (c) Individual single-walled nanotube before (left) and after (right) the substrate is elongated. The changes in the nanotube dimensions in the and directions are indicated.
(Color online) Transport characteristics of nanotubes under strain. (a) Device with approximately ten nanotubes bridging the gap. The resistance changes from under an applied strain of 10%. (b) Device resistance with several patches of percolating nanotube networks bridging the electrodes. The resistance increases with strain. The device strain is modulated between and then between to demonstrate the reproducibility of resistance changes. (Inset) Device resistance vs strain. The resistance changes by per percent of strain.
Histogram of band gaps under 0%, 10%, and 20% elongations for an ensemble of randomly oriented nanotubes with random chirality and diameter distribution of 0.8–1.1 appropriate for HiPco nanotubes. Histogram data derived from the model of Yang and Han as described in the text.
(Color online) Effects of compression on an individual single-walled carbon nanotube. (a) Topographic AFM image of nanotube prior to compression. (b) Topographic AFM image of nanotube after compression. Undulations appear in the image. (c) Line traces from images in (a) and (b) Top trace: Line trace along the dotted line in (a). Bottom trace: Line trace along the dotted line in (b). The height profile after compression shows distinct undulations that were not present before compression that have a characteristic spatial period of for the samples studied.
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