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Mechanism of improved channel carrier mobility for stacked gate dielectric
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10.1063/1.2363141
/content/aip/journal/apl/89/17/10.1063/1.2363141
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2363141
/content/aip/journal/apl/89/17/10.1063/1.2363141
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/content/aip/journal/apl/89/17/10.1063/1.2363141
2006-10-23
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism of improved channel carrier mobility for stacked Y2O3∕HfO2 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2363141
10.1063/1.2363141
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