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Optical determination of the electron effective mass of strain compensated single quantum well
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10.1063/1.2364068
/content/aip/journal/apl/89/17/10.1063/1.2364068
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2364068

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of InGaAs (right) and InGaAsN (left) at various temperatures under an excitation power of .

Image of FIG. 2.
FIG. 2.

Fit (solid line) of the PL spectra line shape normalized to the peak (open circle) at different temperatures for InGaAs (right) and InGaAsN (left). The contributions from exciton recombination (dotted line) and free carrier recombination (dashed line) are shown in the graph.

Image of FIG. 3.
FIG. 3.

Semilogarithmic plot of as function of from both InGaAs and InGaAsN QW (symbols). The straight lines are the best fit to the experimental data using the 2D mass law. The slope yields the exciton binding energy indicated on the figure.

Tables

Generic image for table
Table I.

Parameters for the calculation of electron effective mass at band edge.

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/content/aip/journal/apl/89/17/10.1063/1.2364068
2006-10-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical determination of the electron effective mass of strain compensated In0.4Ga0.6As0.995N0.005∕GaAs single quantum well
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2364068
10.1063/1.2364068
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