Full text loading...
PL spectra of InGaAs (right) and InGaAsN (left) at various temperatures under an excitation power of .
Fit (solid line) of the PL spectra line shape normalized to the peak (open circle) at different temperatures for InGaAs (right) and InGaAsN (left). The contributions from exciton recombination (dotted line) and free carrier recombination (dashed line) are shown in the graph.
Semilogarithmic plot of as function of from both InGaAs and InGaAsN QW (symbols). The straight lines are the best fit to the experimental data using the 2D mass law. The slope yields the exciton binding energy indicated on the figure.
Parameters for the calculation of electron effective mass at band edge.
Article metrics loading...