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Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
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10.1063/1.2364182
/content/aip/journal/apl/89/17/10.1063/1.2364182
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2364182
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normal emission valence band spectra, excited by photons, from (GaMn)As samples with LT-GaAs overlayer thickness ranging from 0 to 20 ML.

Image of FIG. 2.
FIG. 2.

The energy separation between and emission from the point for different LT-GaAs coverages of the layers.

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/content/aip/journal/apl/89/17/10.1063/1.2364182
2006-10-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2364182
10.1063/1.2364182
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