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Schematic of the setup for preparing the (Ga,Mn)N nanowires with different Mn concentrations, where the separation between and GaN powders is .
(a) Representative XRD pattern for the (Ga,Mn)N nanowires. (b) Representative HRTEM image and SAED pattern of a single GaN nanowire whose growth direction is along .
(a) Magnetization as a function of magnetic field for the nanowires with measured at room temperature. The inset shows hysteresis loops for the nanowires with measured at 5 and . (b) Magnetic moment per unit mass and the corresponding effective magnetic moment per Mn atom for the nanowires as a function of Mn concentration at 5 and .
Temperature dependence of magnetization for the nanowires with and 5% measured with a magnetic field of . The inset shows the temperature dependence of magnetization for the undoped GaN nanowires measured with a magnetic field of .
Radius, gate threshold voltage, carrier type, and carrier concentration of the (Ga,Mn)N nanowires with different Mn concentrations.
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