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Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires
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10.1063/1.2364882
/content/aip/journal/apl/89/17/10.1063/1.2364882
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2364882

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the setup for preparing the (Ga,Mn)N nanowires with different Mn concentrations, where the separation between and GaN powders is .

Image of FIG. 2.
FIG. 2.

(a) Representative XRD pattern for the (Ga,Mn)N nanowires. (b) Representative HRTEM image and SAED pattern of a single GaN nanowire whose growth direction is along [100].

Image of FIG. 3.
FIG. 3.

(a) Magnetization as a function of magnetic field for the nanowires with measured at room temperature. The inset shows hysteresis loops for the nanowires with measured at 5 and . (b) Magnetic moment per unit mass and the corresponding effective magnetic moment per Mn atom for the nanowires as a function of Mn concentration at 5 and .

Image of FIG. 4.
FIG. 4.

Temperature dependence of magnetization for the nanowires with and 5% measured with a magnetic field of . The inset shows the temperature dependence of magnetization for the undoped GaN nanowires measured with a magnetic field of .

Tables

Generic image for table
Table I.

Radius, gate threshold voltage, carrier type, and carrier concentration of the (Ga,Mn)N nanowires with different Mn concentrations.

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/content/aip/journal/apl/89/17/10.1063/1.2364882
2006-10-25
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/17/10.1063/1.2364882
10.1063/1.2364882
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