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(a) Three-dimensional schematic illustration of the SET; (b) SEM image of the EBL patterned device; (c) top view of the structure, where the gate is just on the top of the QD; (d) side-view along the AB direction, where the Si layer under the ⟨001⟩-oriented gate line is removed; and (e) side view along the CD direction.
characteristics of device A measured at RT. (a) Typical CB oscillations, ; (b) clear NDCs and fine structures observed at different .
characteristic of device B measured at and RT, .
Dependence of calculated voltage gain on gate modulation factor , supposing .
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