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Cross-sectional SEM image of MQWs on nano-air-bridged GaN; the inset is an enlarged SEM image near the nanopore array region.
(Color online) AFM micrographs of (a) overgrown MQWs on nano-air-bridged GaN and (b) control MQWs. The overgrown MQWs show an improved surface morphology with a reduced pit density .
(a) Cross-sectional TEM image of four-period MQWs on nano-air-bridged GaN showing sharp interface between the InGaN and GaN layers. The thickness of the well and the barrier are estimated to be and , respectively; (b) Cross-sectional TEM image near the nanopore regions revealing the reduction of the threading dislocations.
(Color online) Measured and fitted HRXRD scans for the MQWs grown on (a) nano-air-bridged GaN and (b) on planar GaN template. The angular position of the satellite peak indicates a higher indium composition in the MQWs on nano-air-bridged GaN.
(Color online) Room temperature micro-PL spectra of MQWs grown (a) on nano-air-bridged GaN template and (b) on controlled GaN template. Sample (a) shows higher photoluminescence intensity and redshift of peak emission from MQWs.
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