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Structural and optical properties of multiple quantum wells grown on nano-air-bridged GaN template
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View: Figures


Image of FIG. 1.
FIG. 1.

Cross-sectional SEM image of MQWs on nano-air-bridged GaN; the inset is an enlarged SEM image near the nanopore array region.

Image of FIG. 2.
FIG. 2.

(Color online) AFM micrographs of (a) overgrown MQWs on nano-air-bridged GaN and (b) control MQWs. The overgrown MQWs show an improved surface morphology with a reduced pit density .

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional TEM image of four-period MQWs on nano-air-bridged GaN showing sharp interface between the InGaN and GaN layers. The thickness of the well and the barrier are estimated to be and , respectively; (b) Cross-sectional TEM image near the nanopore regions revealing the reduction of the threading dislocations.

Image of FIG. 4.
FIG. 4.

(Color online) Measured and fitted HRXRD scans for the MQWs grown on (a) nano-air-bridged GaN and (b) on planar GaN template. The angular position of the satellite peak indicates a higher indium composition in the MQWs on nano-air-bridged GaN.

Image of FIG. 5.
FIG. 5.

(Color online) Room temperature micro-PL spectra of MQWs grown (a) on nano-air-bridged GaN template and (b) on controlled GaN template. Sample (a) shows higher photoluminescence intensity and redshift of peak emission from MQWs.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and optical properties of InGaN∕GaN multiple quantum wells grown on nano-air-bridged GaN template