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Investigation on the -type formation mechanism of arsenic doped -type ZnO thin film
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10.1063/1.2364865
/content/aip/journal/apl/89/18/10.1063/1.2364865
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2364865

Figures

Image of FIG. 1.
FIG. 1.

PL spectra at of (a) -type ZnO on GaAs and (b) As doped -type ZnO on GaAs.

Image of FIG. 2.
FIG. 2.

(a) core-level and (b) core-level XPS spectra of ZnO thin films grown on (100) GaAs substrate before and after thermal annealing at .

Image of FIG. 3.
FIG. 3.

characteristics of (a) junction between As doped -type ZnO and intrinsic GaAs, and (b) a ZnO junction between As doped -type ZnO thin film and -type ZnO.

Tables

Generic image for table
Table I.

Electrical property of ZnO films on (100) GaAs depending on before and after postannealing.

Generic image for table
Table II.

Content (%) analysis of a nonannealed (as grown, -type) ZnO thin film grown on (100) GaAs substrate and (b) an annealed (-type) ZnO thin film grown on (100) GaAs substrate using XPS.

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/content/aip/journal/apl/89/18/10.1063/1.2364865
2006-10-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2364865
10.1063/1.2364865
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