Full text loading...
PL spectra at of (a) -type ZnO on GaAs and (b) As doped -type ZnO on GaAs.
(a) core-level and (b) core-level XPS spectra of ZnO thin films grown on (100) GaAs substrate before and after thermal annealing at .
characteristics of (a) junction between As doped -type ZnO and intrinsic GaAs, and (b) a ZnO junction between As doped -type ZnO thin film and -type ZnO.
Electrical property of ZnO films on (100) GaAs depending on before and after postannealing.
Content (%) analysis of a nonannealed (as grown, -type) ZnO thin film grown on (100) GaAs substrate and (b) an annealed (-type) ZnO thin film grown on (100) GaAs substrate using XPS.
Article metrics loading...