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(Color online) AFM image (a) of multiatomic steps on GaAs layer (sample A) grown on a vicinal GaAs. The AFM image (b) of InGaAs islands (sample B) prepared by depositing a nominally -thick layer onto multiatomic steps of GaAs. (See text for details.)
(Color online) AFM images (a) and (b) of two samples grown on the (100) and the exact GaAs substrates. These samples C and D were prepared simultaneously with sample B by depositing nominally -thick layers onto GaAs layers. (See text for details.)
Schematic models for the cross-sectional profile of InGaAs layers deposited on a corrugated GaAs surface. (a) When the nominal thickness of the InGaAs layer is well below , InGaAs wirelike structures will be formed on neighboring multiatomic steps. (b) When the nominal layer thickness exceeds and gets close to , InGaAs layers on neighboring steps coalesce to form big 3D islands.
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