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Lasing in self-assembled quantum dots
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10.1063/1.2372448
/content/aip/journal/apl/89/18/10.1063/1.2372448
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2372448
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Atomic force microscope image of ring-shaped GaAs QDs. The scan area is . (b) Cross-sectional profile of a ring-shaped QD.

Image of FIG. 2.
FIG. 2.

(Color online) PL spectra of an ensemble of ring-shaped QDs measured at (upper) and RT (lower). A fit to the RT spectrum using two Gaussian functions is also shown.

Image of FIG. 3.
FIG. 3.

(a) Emission spectra taken from the cleaved side with various excitation powers (8, 10, 12, and ) at . The inset shows a magnified spectrum at . (b) Integrated emission intensities at as a function of excitation power.

Image of FIG. 4.
FIG. 4.

(a) Lasing spectra at 77, 125, 175, 225, 275, and . [(b) and (c)] Center energy and threshold power of the lasing as a function of temperature. The dotted line in (b) shows the temperature dependence of the GaAs band gap energy. The dotted line in (c) shows the fit according to the characteristic temperature of .

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/content/aip/journal/apl/89/18/10.1063/1.2372448
2006-10-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lasing in GaAs∕AlGaAs self-assembled quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2372448
10.1063/1.2372448
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