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(Color online) Imaginary part of the pseudodielectric function at under various pulsing times and substrate temperatures with fixed Ga . At all temperatures, the stabilized at sufficiently long deposition time. These thicknesses saturated to the dashed line at low temperature, which corresponds to the critical wetting layer thickness.
(Color online) Ellipsometric spectra of the real and imaginary parts of the pseudodielectric function before and during Ga deposition. Spectrum (b) is measured during deposition, and the solid line is a fit using a Drude model-type Ga dispersion curve over the measured GaN template spectrum (a) at . The inset is the extracted high temperature Ga spectrum, and the estimated Ga thickness is .
(Color online) and corresponding (which is the intensity of the reflected light beam) recorded for Ga deposition of Ga at for . Here, after it reaches to the critical thickness (red: highest flux), the intensity start to decreases. (b) Plot of the linear relationship between desorption delay and deposition time.
(Color online) Desorption curves after (a) and (b) of Ga deposition corresponding to 0.8 and 2.1 ML, respectively. Both activation energies of the first monolayer and second monolayer are about , and surface vibration frequencies are for first monolayer and for second monolayer.
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