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Photoluminescence response of ion-implanted silicon
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Image of FIG. 1.
FIG. 1.

Triangles show the mean separation in atomic bond lengths of the equivalent divacancies, measured in the first of the sample by VEPAS, as a function of implant dose, in the as-implanted state. The full line shows in bond lengths (left scale) corresponding to fractional concentrations of . The measured intensities of the line (crosses, dotted line) and of the integrated luminescence between 800 and (stars, broken line) are in arbitrary units, scaled to convenient sizes for plotting. The uncertainty in each point is about . The lines are calculated with the energy-transfer model. With no energy transfer the intensity would increase as shown by the rising dotted curve to a limit determined by the excitation power.

Image of FIG. 2.
FIG. 2.

Integrated intensities (linear scale) of the boron PL, from , as functions of implant dose. Samples have been annealed for at (triangles), (squares), and (stars). The solid lines are guides for the eyes. With no effect from the implantation, the intensities would all lie on the broken line. The uncertainty is .


Generic image for table
Table I.

Samples where the low-temperature PL intensity is believed to be proportional to the concentration of the optical centers are shown by ⋆, those where there is not expected to be a correlation by ×, and borderline cases by +. Samples where the PL signal is below the noise level of our system are shown by −. Samples implanted at and annealed for at each temperature.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence response of ion-implanted silicon