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Highly conductive Sb-doped layers in strained Si
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View: Figures


Image of FIG. 1.
FIG. 1.

measurements as a function of annealing temperature ( RTA) for , implants. (a) Sb in Si and strained Si. (b) As and Sb in strained Si. The As results are compared with data from Dilliway et al. (Ref. 4), which show a 15% reduction in in the case of , As implants in bulk and strained Si.

Image of FIG. 2.
FIG. 2.

measurements as a function of annealing temperature ( RTA) for the , Sb and As implants shown in Fig. 1.

Image of FIG. 3.
FIG. 3.

SIMS and differential Hall profiles for Sb-implanted strained and unstrained silicon (, ) followed by RTA ( at ). The thin dotted curve is the as-implanted Sb atomic profile. The thin curves connecting the open symbols are Sb atomic profiles after annealing. The filled symbols are electrically active Sb concentrations after annealing, and the partly filled symbols are the corresponding mobilities. The thick curves through the electrical data are provided as a guide to the eye. In all cases, continuous curves are results for strained Si and the dashed curves are for unstrained Si.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly conductive Sb-doped layers in strained Si