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Growth of single-phase by using metal organic chemical vapor deposition with dual-source precursors
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10.1063/1.2382742
/content/aip/journal/apl/89/18/10.1063/1.2382742
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2382742
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of grown on (a) Si(111) and (b) Si(100) substrates at different temperatures.

Image of FIG. 2.
FIG. 2.

SEM images of growth on (a) Si(111) and (b) Si(100) substrates.

Image of FIG. 3.
FIG. 3.

Typical PL spectra of films grown on a silicon substrate and the details of emission peaks (inset).

Image of FIG. 4.
FIG. 4.

Temperature dependence PL spectra of the films. The intensities have been normalized for comparison.

Image of FIG. 5.
FIG. 5.

Temperature dependence of the peak energy of free exciton emission of .

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/content/aip/journal/apl/89/18/10.1063/1.2382742
2006-11-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2382742
10.1063/1.2382742
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