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Cotunneling current in Si single-electron transistor based on multiple islands
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10.1063/1.2384802
/content/aip/journal/apl/89/18/10.1063/1.2384802
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2384802
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the fabricated SET with three islands. S and D stand for source and drain. Only one of the two gates was used in the electrical measurements.

Image of FIG. 2.
FIG. 2.

(Color online) Temperature dependence of the Coulomb oscillation for the SET with three islands in the temperature range from at a drain voltage of . One of the valleys of the Coulomb oscillation is marked by a thick arrow.

Image of FIG. 3.
FIG. 3.

(Color online) Drain current as a function of drain voltage for the SET with three islands at a gate voltage of .

Image of FIG. 4.
FIG. 4.

Relation between temperature and drain current for the SET with a single island at a of a valley of the Coulomb oscillation. Here, is . The dotted line shows a logarithmical fit of measured above where fitting parameter is the proportional constant in Eq. (1).

Image of FIG. 5.
FIG. 5.

Relation between temperature and drain current for the SET with three islands at a of the valley marked by the thick arrow in Fig. 2. Here, is . The dotted line shows a logarithmical fit of measured above where fitting parameter is the proportional constant in Eq. (2).

Image of FIG. 6.
FIG. 6.

Drain current as a function of drain voltage for the SET with three islands at a of the valley marked in Fig. 2. In the low voltage region, the measured drain current data almost lie in a straight line with a slope of 1. The dotted line shows the theoretical prediction of inelastic cotunneling current given by Eq. (2), where the proportional constant is set to the same value as the one for the dotted line in Fig. 5.

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/content/aip/journal/apl/89/18/10.1063/1.2384802
2006-11-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cotunneling current in Si single-electron transistor based on multiple islands
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/18/10.1063/1.2384802
10.1063/1.2384802
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