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Dependence of the QD density (full symbols) and density of coalesced dots (open symbols) on the Sb irradiation time for QDs grown with (triangles) and (squares). Absence of open symbols indicates that no coalesced dot was found on AFM images.
(Color online) AFM images of InAs QDs grown on GaAs with (a) and on Sb:GaAs with GR and equal to and (b), and (c), and and [(d), ], respectively. The height contrast is .
(Color online) (a) Dependence of the RT PL intensity on the growth rate of the GaAs capping layer for GaAs-capped QDs grown with and equal to (triangles) and (squares). (b) Dependence of the RT PL intensity on for GaAs-capped QDs grown with (triangles) and (squares).
(Color online) (a) RT PL spectra of QDs (, ), capped by GaAs (solid line) and (dashed line), and GaAs-capped QD used in Ref. 6 (dotted line). The inset shows the peak wavelength dependence on the annealing temperature for (circles) and QDs (squares), capped by .
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