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Schematic device structures and electric field distributions at breakdown of (a) conventional SBD and (b) SJ diode.
(a) Schematic device structure of PJ diode, (b) the polarization charge distribution, and (c) the energy band diagram.
Simulated results for the relationship between and drift region length for PJ diodes. Results of conventional SBDs were almost identical (not plot).
Comparison with trade-off characteristics of conventional SBDs and PJ diodes. The drift region thickness was .
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