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Interfacial varactor characteristics of ferroelectric thin films on high-resistivity Si substrate
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10.1063/1.2214170
/content/aip/journal/apl/89/2/10.1063/1.2214170
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2214170
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The voltage dependence of capacitance and loss tangent of BZT deposited on HR-Si (a) without and (b) with buffer layer at .

Image of FIG. 2.
FIG. 2.

(Color online) The voltage dependence of capacitance and loss tangent (insets) of BZT deposited on HR-Si (a) without and (b) with buffer layer at microwave frequency. (The arrows denote the biasing voltage increasing from with step.)

Image of FIG. 3.
FIG. 3.

(Color online) The x-ray photoelectron spectroscopy of (a) BZT on HR-Si and (b) on HR-Si. (The dot lines show surface profile of the ultrathin films and the solid lines show the profile at depth close to Si surface.)

Image of FIG. 4.
FIG. 4.

(Color online) The cross-sectional TEM images of BZT deposited on HR-Si (a) without and (b) with a buffer layer.

Image of FIG. 5.
FIG. 5.

A simplified equivalent circuit of the coplanar Ag/BZT/interfacial-layer/HR-Si MOS capacitors.

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/content/aip/journal/apl/89/2/10.1063/1.2214170
2006-07-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial varactor characteristics of ferroelectric thin films on high-resistivity Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2214170
10.1063/1.2214170
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