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Magnetic tunnel junctions based on epitaxial bilayers
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10.1063/1.2216109
/content/aip/journal/apl/89/2/10.1063/1.2216109
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2216109
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Upper: XRD scan for a substrate/ heterostructure. The inset shows the off-axis scans for the (110) peaks of both layers. The values of the angle are 43.4° and 44.1° for and , respectively. Lower: high resolution cross-section STEM image of the interface (no natural barrier is observed). An edge dislocation core resulting from the lattice mismatch is highlighted. The inset shows a lower magnification image.

Image of FIG. 2.
FIG. 2.

(a) Resistance vs field for junctions with (a) a barrier and (b) a natural barrier, exhibiting positive and negative TMRs, respectively. (c) Plot of the TMR and resistance-area product for junctions with varying barrier thickness. The lines are a guide to the eye. All the measurements are at with bias voltage.

Image of FIG. 3.
FIG. 3.

Resistance vs temperature for a junction with a barrier (closed) and a natural barrier (open).

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/content/aip/journal/apl/89/2/10.1063/1.2216109
2006-07-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetic tunnel junctions based on CrO2∕SnO2 epitaxial bilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2216109
10.1063/1.2216109
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