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Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy
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10.1063/1.2217256
/content/aip/journal/apl/89/2/10.1063/1.2217256
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2217256
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) MnAs layer-thickness dependence of surface morphology in atomic-force-microscopy images of area for 2, 4, and 8 ML thickness and bulk MnAs films. The scale in height is in each panel.

Image of FIG. 2.
FIG. 2.

Valence-band photoemission spectra depending on the MnAs layer thicknesses of 2, 4, and 8 ML and bulk MnAs films. Bottom shows the valence-band spectrum of GaAs as a reference.

Image of FIG. 3.
FIG. 3.

Core-level photoemission spectra depending on the MnAs layer thicknesses of 2, 4, and 8 ML and bulk MnAs films for (a) As and (b) Ga states. Bottom shows the core-level spectra of GaAs surface reconstruction.

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/content/aip/journal/apl/89/2/10.1063/1.2217256
2006-07-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2217256
10.1063/1.2217256
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