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Thermal stability of magnetic tunneling junctions with MgO barriers for high temperature spintronics
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10.1063/1.2219997
/content/aip/journal/apl/89/2/10.1063/1.2219997
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2219997
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) As-deposited (open circles) and annealed (solid circles) room temperature magnetoresistances as a function of applied field along the free layer easy axis. The bias across the junction is . (b) Typical MR transfer curve for a junction fabricated in the sensor configuration.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Temperature dependence of normalized magnetoresistance (black squares) with theoretical fitting results (open circles): (b) Dependence of resistance-area product of junctions in the parallel (red) and antiparallel (black) states: (c) Change of conductance of four junctions (normalized at room temperature) along with theoretical fitting (solid line).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Temperature dependence of the transfer curves of a sensor-configuration junction. (b) Sensitivity (open squares) and estimated magnetic field resolution (solid circles) of the same MTJ sensor as a function of temperature.

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/content/aip/journal/apl/89/2/10.1063/1.2219997
2006-07-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability of magnetic tunneling junctions with MgO barriers for high temperature spintronics
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2219997
10.1063/1.2219997
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