1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Impact of – and nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.2220007
/content/aip/journal/apl/89/2/10.1063/1.2220007
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220007
/content/aip/journal/apl/89/2/10.1063/1.2220007
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/89/2/10.1063/1.2220007
2006-07-13
2014-12-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of 4H– and 6H–SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220007
10.1063/1.2220007
SEARCH_EXPAND_ITEM