1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Impact of gate materials on positive charge formation in stacks
Rent:
Rent this article for
USD
10.1063/1.2220484
/content/aip/journal/apl/89/2/10.1063/1.2220484
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220484
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical test procedure. Devices were first stressed under high electrical field. gives an electrical field across the interfacial layer of . The electron trapping during the stress leads to a positive gate voltage shift . After the stress, a relatively low negative field of was applied to detrap electrons from the dielectric and allow the positive charges being measured from the negative . The was measured from the gate voltage shift in the subthreshold region of the transfer characteristics.

Image of FIG. 2.
FIG. 2.

Impact of gate materials on positive charge formation under positive gate bias stresses. The is the electron fluency during the stress. The positive charge formation with the metal gate is significantly higher than that with poly-Si gate.

Image of FIG. 3.
FIG. 3.

Schematic energy band diagrams for metal-gated samples under positive (a) and negative (b) gate bias stresses. It is assumed that hydrogen released from the anode dominates the positive charge formation and the hydrogen density near the TaN gate interface is higher than that near the substrate interface.

Image of FIG. 4.
FIG. 4.

Dependence of positive charge formation on gate bias polarity and gate materials. When stressed under negative gate bias of , positive charge formation with the metal gate is similar to that with the poly-Si gate. For the metal gate, positive charge formation under is significantly less than that under .

Image of FIG. 5.
FIG. 5.

Behavior of positive charges formed in metal-gated stack under alternating gate bias polarities . When was applied to a fresh device, the symbol “◇” shows that charging is negligible under , but some electron trapping occurs under , leading to a positive . After a stress under for an electron fluency of , a large part of the formed positive charges can be repeatedly discharged under and recharged under . The symbol “엯” is the directly measured . The symbol “▴” represents positive charges after correcting the electron trapping effect.

Loading

Article metrics loading...

/content/aip/journal/apl/89/2/10.1063/1.2220484
2006-07-12
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of gate materials on positive charge formation in HfO2∕SiO2 stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220484
10.1063/1.2220484
SEARCH_EXPAND_ITEM