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Impact of gate materials on positive charge formation in stacks
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10.1063/1.2220484
/content/aip/journal/apl/89/2/10.1063/1.2220484
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220484
/content/aip/journal/apl/89/2/10.1063/1.2220484
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/content/aip/journal/apl/89/2/10.1063/1.2220484
2006-07-12
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of gate materials on positive charge formation in HfO2∕SiO2 stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220484
10.1063/1.2220484
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