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Room temperature fabricated ZnO thin film transistor using high- gate insulator prepared by sputtering
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10.1063/1.2220485
/content/aip/journal/apl/89/2/10.1063/1.2220485
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220485
/content/aip/journal/apl/89/2/10.1063/1.2220485
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/content/aip/journal/apl/89/2/10.1063/1.2220485
2006-07-11
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature fabricated ZnO thin film transistor using high-KBi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220485
10.1063/1.2220485
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