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Room temperature fabricated ZnO thin film transistor using high- gate insulator prepared by sputtering
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10.1063/1.2220485
/content/aip/journal/apl/89/2/10.1063/1.2220485
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220485
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of BZN films as a function of annealing temperature.

Image of FIG. 2.
FIG. 2.

Dielectric constant of BZN films as a function of annealing temperature. The inset shows diffraction pattern and TEM images of BZN films.

Image of FIG. 3.
FIG. 3.

(Color online) Leakage current density of BZN films as a function of annealing temperature.

Image of FIG. 4.
FIG. 4.

(a) Drain-to-source current vs drain-to-source voltage curves at various gate-to-source voltages for ZnO TFTs with BZN gate insulators and (b) log drain-to-source current and square root of drain-to-source voltage of . Width and length of the ZnO TFTs were 2000 and , respectively.

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/content/aip/journal/apl/89/2/10.1063/1.2220485
2006-07-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature fabricated ZnO thin film transistor using high-KBi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220485
10.1063/1.2220485
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