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Nanoscale carrier transport in Ohmic contacts on AlGaN epilayers grown on Si(111)
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10.1063/1.2220486
/content/aip/journal/apl/89/2/10.1063/1.2220486
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220486
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Bragg-Brentano diffraction pattern of contacts with Ti annealed at 650 and (a) and Ti annealed at 650 and (b). The phase formed during annealing and the multiple substrate contributions are indicated. Using a thinner Ti layer, a transition from toward and Al–Au–Ti phases is promoted.

Image of FIG. 2.
FIG. 2.

Cross section TEM micrographs of contacts with Ti annealed at (a) and Ti annealed at (b).

Image of FIG. 3.
FIG. 3.

Current maps determined by C-AFM measurements of the sample with Ti annealed at (a) and Ti annealed at (b). The Ti sample has a larger conductive fraction of the contact area with respect to the Ti sample.

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/content/aip/journal/apl/89/2/10.1063/1.2220486
2006-07-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale carrier transport in Ti∕Al∕Ni∕Au Ohmic contacts on AlGaN epilayers grown on Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220486
10.1063/1.2220486
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