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(a) BST film growth rate and ratio and (b) ratio and oxygen incorporation as a function of total process gas pressure .
Measured and fitted XPS spectra for Ba energy level, as a function of process gas pressure , for substrate temperature. The XPS spectrum for the sputtering target material is also shown.
XRD patterns of BST thin films deposited at with substrate temperature (a) and (b)–(e) . Film thickness is also indicated. The sample shown at (d) was preannealed at in 1:9 inside the deposition chamber for prior to sputtering the film. After a postdeposition anneal of sample (d) in air at , the XRD pattern (e) was obtained.
Extracted capacitance and factor from at 0 and bias for gap interdigital capacitor.
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