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Thermal stability and band alignments for dielectrics on Ge
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10.1063/1.2220531
/content/aip/journal/apl/89/2/10.1063/1.2220531
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220531
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The Ge (a) and N (b) spectra of Ge substrates without and with nitride overlayers.

Image of FIG. 2.
FIG. 2.

The Ge (a) and N (b) spectra of Ge substrates nitrided at .

Image of FIG. 3.
FIG. 3.

The valence-band and Ge spectra of Ge substrates without and with nitride overlayers: (a) bare Ge substrate, (b) Ge substrate with nitride overlayer prepared at for (photoelectron takeoff angle of 90°), and (c) Ge substrate with nitride overlayer prepared at for (photoelectron takeoff angle of 30°).

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/content/aip/journal/apl/89/2/10.1063/1.2220531
2006-07-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability and band alignments for Ge3N4 dielectrics on Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2220531
10.1063/1.2220531
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