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SEM image of the pyramid-type Si substrate after the chemical etching process. The sidewalls of the pyramids are Si (111) planes. The mean size of the pyramid is about .
The XRD spectra of the FePt films (a) deposited on pyramid-type Si substrate and (b) deposited on Si wafer .
(a) The coercivity dependence on the film thickness along two directions for films deposited on substrates. Square and circle indicate the coercivities along substrate normal and in-plane directions, respectively. (b) The magnetic hysteresis loops along two directions for the film with the thickness of on . (c) The coercivity dependence on the film thickness for films on substrates. Up and down triangles indicate the coercivity along substrate normal and in-plane directions, respectively. (d) Hysteresis loops along two directions for the film with the thickness of on .
(a) The dependence of squareness and the normalized saturation magnetization on the angle. (b) The dependence on the angle of coercivity and slope of hysteresis loops. The angle is between the substrate normal direction and applied magnetic field for film on with thickness of .
The structure properties of FePt films ( thickness) deposited on . The lattice parameters of FePt are: and ;
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