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Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote plasma
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10.1063/1.2221391
/content/aip/journal/apl/89/2/10.1063/1.2221391
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221391
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The integrated absorbance (normalized to the film thickness) as a function of the nitrogen flow for films deposited under -poor conditions . Inset: the IR region where the absorption occurs together with the Lorentzian fit used for determining the peak area.

Image of FIG. 2.
FIG. 2.

Mass spectrometry results on the HCN and NO formation in the background of an plasma . The measured signal is normalized to the He signal (constant flow) in order to correct for pressure changes in the mass spectrometer/plasma reactor.

Image of FIG. 3.
FIG. 3.

(Color online) The electron density and inversed mobility as determined from Hall measurements as functions of the CN absorbance. Inset: the resistivity of the N-doped ZnO films changes upon nitrogen addition.

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/content/aip/journal/apl/89/2/10.1063/1.2221391
2006-07-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar∕N2 plasma
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221391
10.1063/1.2221391
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