Full text loading...
characteristics at for -channel MOSFETs with gate oxide formed with three processes shown in Table I.
(a) High-frequency curves of the -type MOS capacitors. (b) Interface state density as function of energy obtained from -type MOS capacitors by using high-low method.
Temperature dependence of (circle symbols) and (triangle symbols) of -channel MOSFETs processed using wet gate oxidation.
Gate oxidation processes used in this study.
Properties for the -channel MOSFETs and -type MOS capacitors prepared using three oxidation processes.
Article metrics loading...