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Effect of the oxidation process on the electrical characteristics of -channel metal-oxide-semiconductor field-effect transistors
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10.1063/1.2221400
/content/aip/journal/apl/89/2/10.1063/1.2221400
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221400

Figures

Image of FIG. 1.
FIG. 1.

characteristics at for -channel MOSFETs with gate oxide formed with three processes shown in Table I.

Image of FIG. 2.
FIG. 2.

(a) High-frequency curves of the -type MOS capacitors. (b) Interface state density as function of energy obtained from -type MOS capacitors by using high-low method.

Image of FIG. 3.
FIG. 3.

Temperature dependence of (circle symbols) and (triangle symbols) of -channel MOSFETs processed using wet gate oxidation.

Tables

Generic image for table
Table I.

Gate oxidation processes used in this study.

Generic image for table
Table II.

Properties for the -channel MOSFETs and -type MOS capacitors prepared using three oxidation processes.

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/content/aip/journal/apl/89/2/10.1063/1.2221400
2006-07-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of the oxidation process on the electrical characteristics of 4H–SiCp-channel metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221400
10.1063/1.2221400
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