1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of the oxidation process on the electrical characteristics of -channel metal-oxide-semiconductor field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.2221400
/content/aip/journal/apl/89/2/10.1063/1.2221400
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221400
/content/aip/journal/apl/89/2/10.1063/1.2221400
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/89/2/10.1063/1.2221400
2006-07-10
2014-07-31
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of the oxidation process on the electrical characteristics of 4H–SiCp-channel metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221400
10.1063/1.2221400
SEARCH_EXPAND_ITEM