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Implanted subcollector process cross section: (a) blanket shallow Fe implant to suppress interface, (b) Si implant to form the subcollector, (c) active HBT layers are grown and device is formed, and (e) top view of implanted subcollector DHBT.
Common-emitter and forward Gummel characteristics. Device dimensions: .
Measured microwave gains and Mason’s unilateral power gain at a bias associated with peak and .
Variation of with at for standard triple mesa HBT,10 implanted subcollector HBTs with shallow Fe implant, and implanted subcollector HBTs without Fe. Junction areas and epitaxial layer structures (drift collector, base, and emitter) of the HBTs are identical.
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