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Interface charge compensation in InP based heterojunction bipolar transistors with implanted subcollectors
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10.1063/1.2221512
/content/aip/journal/apl/89/2/10.1063/1.2221512
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221512
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Implanted subcollector process cross section: (a) blanket shallow Fe implant to suppress interface, (b) Si implant to form the subcollector, (c) active HBT layers are grown and device is formed, and (e) top view of implanted subcollector DHBT.

Image of FIG. 2.
FIG. 2.

Common-emitter and forward Gummel characteristics. Device dimensions: .

Image of FIG. 3.
FIG. 3.

Measured microwave gains and Mason’s unilateral power gain at a bias associated with peak and .

Image of FIG. 4.
FIG. 4.

Variation of with at for standard triple mesa HBT,10 implanted subcollector HBTs with shallow Fe implant, and implanted subcollector HBTs without Fe. Junction areas and epitaxial layer structures (drift collector, base, and emitter) of the HBTs are identical.

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/content/aip/journal/apl/89/2/10.1063/1.2221512
2006-07-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface charge compensation in InP based heterojunction bipolar transistors with implanted subcollectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221512
10.1063/1.2221512
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