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Correlation between reliability of thermal oxides and dislocations in -type epitaxial wafers
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10.1063/1.2221525
/content/aip/journal/apl/89/2/10.1063/1.2221525
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221525
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Correlation between in gate-oxide-forming area and value of extracted from constant-voltage TDDB measurement at room temperature. Symbols refer to edge breakdown (엯) and dislocation-related breakdown (●).

Image of FIG. 2.
FIG. 2.

Typical Nomarski microscopy images of gate-oxide-forming area on molten-KOH-etched wafer for (a) edge breakdown and (b) dislocation-related breakdown modes.

Image of FIG. 3.
FIG. 3.

Typical Nomarski microscopy images of gate-oxide-forming area on molten-KOH-etched wafer. Dielectric breakdowns of thermal oxides occurred at (a) basal plane, (b) screw, and (c) threading edge dislocations, respectively. (A), (B), and (C) identify basal plane, screw, and threading edge dislocations, respectively.

Image of FIG. 4.
FIG. 4.

Correlation between in gate-oxide-forming area and value of extracted from constant-voltage TDDB measurement for dislocation-related breakdown mode. Symbols refer to dielectric breakdown at basal plane (●), screw (◻), and threading edge dislocations (▵), respectively.

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/content/aip/journal/apl/89/2/10.1063/1.2221525
2006-07-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221525
10.1063/1.2221525
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