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Williamson-Hall plot for relaxed GaAs layer on Si(001). Open and full circles correspond to GID and GED geometries, respectively.
Profiles of the 444 diffraction peaks in double-crystal (a) and triple-crystal (b) diffraction experiments.
Schemes of the GID and GED measurements and the reciprocal space maps in the two diffraction geometries. The broken lines perpendicular to the respective diffracted beam direction show the integration performed during a double-crystal measurement.
Calculated reciprocal space map in reflection 444 (a) and the linear density of random 60° misfit dislocations obtained by fits from different types of measurements for different reflections (b).
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