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X-ray diffraction peaks at glancing incidence and glancing exit from highly mismatched epitaxial layers
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10.1063/1.2221885
/content/aip/journal/apl/89/2/10.1063/1.2221885
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221885
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Williamson-Hall plot for relaxed GaAs layer on Si(001). Open and full circles correspond to GID and GED geometries, respectively.

Image of FIG. 2.
FIG. 2.

Profiles of the 444 diffraction peaks in double-crystal (a) and triple-crystal (b) diffraction experiments.

Image of FIG. 3.
FIG. 3.

Schemes of the GID and GED measurements and the reciprocal space maps in the two diffraction geometries. The broken lines perpendicular to the respective diffracted beam direction show the integration performed during a double-crystal measurement.

Image of FIG. 4.
FIG. 4.

Calculated reciprocal space map in reflection 444 (a) and the linear density of random 60° misfit dislocations obtained by fits from different types of measurements for different reflections (b).

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/content/aip/journal/apl/89/2/10.1063/1.2221885
2006-07-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: X-ray diffraction peaks at glancing incidence and glancing exit from highly mismatched epitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/2/10.1063/1.2221885
10.1063/1.2221885
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