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(a) Cross sectional structure of the GaN sample prepared for chemical etch. The stripes are aligned to direction. Also indicated in the figure are the family planes. (b) Cross sectional SEM image of the GaN EMT after being etched for more than in molten KOH at .
Optical microscopic image of GaN EMTs after etching in molten KOH at .
Cross sectional SEM image of (a) an as-grown GaN sample before KOH etch, (b) GaN EMTs after KOH etch at , (c) GaN EMTs after KOH etch at , and (d) GaN EMTs after etch at , along with an illustration of the suggested etching process in the cross section regions.
Plot of the depth of GaN EMTs as a function of etchant temperature at a fixed etching time of in molten KOH.
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