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Extended microtunnels in GaN prepared by wet chemical etch
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10.1063/1.2374841
/content/aip/journal/apl/89/20/10.1063/1.2374841
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2374841
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross sectional structure of the GaN sample prepared for chemical etch. The stripes are aligned to direction. Also indicated in the figure are the family planes. (b) Cross sectional SEM image of the GaN EMT after being etched for more than in molten KOH at .

Image of FIG. 2.
FIG. 2.

Optical microscopic image of GaN EMTs after etching in molten KOH at .

Image of FIG. 3.
FIG. 3.

Cross sectional SEM image of (a) an as-grown GaN sample before KOH etch, (b) GaN EMTs after KOH etch at , (c) GaN EMTs after KOH etch at , and (d) GaN EMTs after etch at , along with an illustration of the suggested etching process in the cross section regions.

Image of FIG. 4.
FIG. 4.

Plot of the depth of GaN EMTs as a function of etchant temperature at a fixed etching time of in molten KOH.

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/content/aip/journal/apl/89/20/10.1063/1.2374841
2006-11-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extended microtunnels in GaN prepared by wet chemical etch
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2374841
10.1063/1.2374841
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