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Realization of high hole concentrations in Mg doped semipolar GaN
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10.1063/1.2378486
/content/aip/journal/apl/89/20/10.1063/1.2378486
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2378486
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of the Mg concentration in GaN, as determined by SIMS, on the flow rate.

Image of FIG. 2.
FIG. 2.

Variation in the hole carrier concentration and Hall mobility for layers deposited on (100) spinel substrates with differing miscut angles along the ⟨011⟩ direction.

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/content/aip/journal/apl/89/20/10.1063/1.2378486
2006-11-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2378486
10.1063/1.2378486
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