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Temperature dependence of the GaAsN conduction band structure
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10.1063/1.2387973
/content/aip/journal/apl/89/20/10.1063/1.2387973
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2387973
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature-dependent PR spectra of a GaAsN sample with 0.65% nitrogen. For clarity, the spectra are plotted with an offset. The different transitions are labeled according to their origin.

Image of FIG. 2.
FIG. 2.

Measured PR spectrum (lower curve) and calculated modulus spectrum (upper curve) of a strained epilayer at .

Image of FIG. 3.
FIG. 3.

Temperature dependence of the , , and transitions for a strained epilayer.

Image of FIG. 4.
FIG. 4.

Temperature dependence of and for a strained epilayer.

Image of FIG. 5.
FIG. 5.

Temperature dependence of and for a strained epilayer.

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/content/aip/journal/apl/89/20/10.1063/1.2387973
2006-11-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the GaAsN conduction band structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2387973
10.1063/1.2387973
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