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Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown films on Si(100)
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10.1063/1.2388128
/content/aip/journal/apl/89/20/10.1063/1.2388128
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388128
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of europium oxide films grown on Si(100) at (a) , (b) , (c) , and (d) and annealed at for in ambient.

Image of FIG. 2.
FIG. 2.

Bidirectional characteristics of the films grown at (a) , (b) , and (c) (arrow marks indicate the direction of hysteresis); (d) variation of hysteresis as a function of growth temperature. Inset of 3(d) shows the variation of flat band voltage as a function of growth temperature. The solid line is only a visual guide.

Image of FIG. 3.
FIG. 3.

Bidirectional characteristic of grown film which was annealed at in for . The inset of figure shows the variation of hysteresis as a function of annealing temperature. The solid line is only a visual guide. The arrow shows the direction of the hysteresis.

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/content/aip/journal/apl/89/20/10.1063/1.2388128
2006-11-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388128
10.1063/1.2388128
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