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Effect of hydrogenation on the memory properties of Si nanocrystals obtained by inductively coupled plasma chemical vapor deposition
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10.1063/1.2388144
/content/aip/journal/apl/89/20/10.1063/1.2388144
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388144

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM image of a structure after and in an ultrapure Ar ambient annealing.

Image of FIG. 2.
FIG. 2.

QSCV responses of the MOS capacitors with after various sample treatments.

Image of FIG. 3.
FIG. 3.

Effect of hydrogenation on the high-frequency hysteresis for the MOS capacitors with annealed layers of different stoichiometries . The curves before hydrogenation is shown in the inset.

Image of FIG. 4.
FIG. 4.

Effect of hydrogenation on the flatband voltage shift due to electron or hole charging as a function of for the MOS capacitors with annealed layers.

Image of FIG. 5.
FIG. 5.

Effect of hydrogenation on the retention characteristics due to electron or hole charging for the MOS capacitors with .

Tables

Generic image for table
Table I.

Value of determined by XPS for each flow rate ratio of .

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/content/aip/journal/apl/89/20/10.1063/1.2388144
2006-11-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of hydrogenation on the memory properties of Si nanocrystals obtained by inductively coupled plasma chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388144
10.1063/1.2388144
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