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High-performance microscale single-crystal transistors by lithography on an elastomer dielectric
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10.1063/1.2388151
/content/aip/journal/apl/89/20/10.1063/1.2388151
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388151

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of fabrication of elastomeric transistors using photolithography.

Image of FIG. 2.
FIG. 2.

Transfer and output curves of tetracene single-crystal FETs, with [(a) and (c)] oxide and [(b) and (d)] PDMS dielectric layers. The oxide device exhibits a strong hysteresis characteristic of trapping at the oxide/active layer interface and a nonlinearity at low voltage indicative of contact resistance. The hysteresis of the PDMS device is negligible and exhibits a truly linear regime from onset at .

Image of FIG. 3.
FIG. 3.

Output and transfer curves from a rubrene single-crystal transistor with a channel length of .

Tables

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Table I.

Measured electrical characteristics of lithographically patterned elastomer transistors. All reported values have been reproduced on multiple crystals, have of 10 or 20, and have channel lengths of .

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/content/aip/journal/apl/89/20/10.1063/1.2388151
2006-11-14
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance microscale single-crystal transistors by lithography on an elastomer dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388151
10.1063/1.2388151
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