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(Color online) Schematic of fabrication of elastomeric transistors using photolithography.
Transfer and output curves of tetracene single-crystal FETs, with [(a) and (c)] oxide and [(b) and (d)] PDMS dielectric layers. The oxide device exhibits a strong hysteresis characteristic of trapping at the oxide/active layer interface and a nonlinearity at low voltage indicative of contact resistance. The hysteresis of the PDMS device is negligible and exhibits a truly linear regime from onset at .
Output and transfer curves from a rubrene single-crystal transistor with a channel length of .
Measured electrical characteristics of lithographically patterned elastomer transistors. All reported values have been reproduced on multiple crystals, have of 10 or 20, and have channel lengths of .
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